info@bitchipsemiconductors.com

+91-93217 43505

Facebook
Instagram
You-Tube

MOSFET

TRADERS SUPPLIERS & STOCKIST

FCPF11N60T

  • Package/Case: TO-220-3
  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 600 V
  • MId - Continuous Drain Current: 11 A

CS10N65F

  • Type of Control Channel: N-Channel
  • Maximum Power Dissipation: 32 W
  • Maximum Drain-Source Voltage: 650 V

STFH10N60M2

  • Gate-source voltage: 25
  • Drain current (pulsed): 30 W
  • Total power dissipation at TC = 25 °C: 25 V
  • N-channel: 600 V

CR10N60F

  • Drain-to-Source Voltage: 600 v
  • Continuous Drain Current: 10 W
  • Pulsed Drain Current: 40 V
  • Gate-to-Source Voltage: ±30

WGF8N65

  • Maximum Power Dissipation: 48 w
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 8 A

RS8N80F

  • Low On Resistance
  • Low Gate Charge
  • Peak Current vs Pulse Width Curve
  • RoHS Compliant

8N60

  • Ultra low gate charge ( typical 28 nC )
  • Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
  • Fast switching capability
  • Avalanche energy specified

7N80

  • 7N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.

FQPF6N90CT

  • 6A, 900V, RDS(on): 2.3Ω @VGS = 10 V
  • Low gate charge ( typical 30 nC)
  • Low Crss ( typical 11 pF)
  • Fast switching

AP04N70

  • Type of Control Channel: N-Channel
  • Pd ⓘ - Maximum Power Dissipation: 62.5 W
  • |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
  • |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
  • |Id| ⓘ - Maximum Drain Current: 4 A

F4N65SE

  • Type of Control Channel: N-Channel
  • Pd ⓘ - Maximum Power Dissipation: 30 W/li>
  • |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
  • |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

CS4N60

  • Type of Control Channel: N-Channel
  • Maximum Power Dissipation: 50 W
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 4 A

02N65

  • Ultra Low gate charge (typical 45nC)
  • Low reverse transfer capacitance (CRSS = typical 9 pF)
  • Fast switching capability
  • Avalanche energy specified

BUZ103SL

  • Type of Control Channel: N-Channel
  • Maximum Power Dissipation: 75 W
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 28 A
  • Maximum Junction Temperature: 175 °C

BUZ101SL

  • Type of Control Channel: N-Channel
  • Maximum Power Dissipation: 55 W
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Gate-Source Voltage: 14 V
  • Maximum Drain Current: 20 A

IRF840

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

IRF630NPBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 200 V
  • Id - Continuous Drain Current: 9.3 A
  • Rds On - Drain-Source Resistance: 300 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V

IRF540NPBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 33 A
  • Rds On - Drain-Source Resistance: 44 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V

IRFZ24NPBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 55 V
  • Id - Continuous Drain Current: 17 A
  • Rds On - Drain-Source Resistance: 70 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V

IR2117

  • Fully operational to +600 V
  • Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20 V
  • Undervoltage lockout
  • CMOS Schmitt-triggered inputs with pull-down

IRFP4768PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 250 V
  • Id - Continuous Drain Current: 93 A
  • Rds On - Drain-Source Resistance: 17.5 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Vgs th - Gate-Source Threshold Voltage: 1.8 V

IRFP4568PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 150 V
  • Id - Continuous Drain Current: 171 A
  • Rds On - Drain-Source Resistance: 4.8 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V

IRFB4115PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 150 V
  • Id - Continuous Drain Current: 104 A
  • Rds On - Drain-Source Resistance: 9.3 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V

IRFB4110PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:100 V
  • Id - Continuous Drain Current:100 V
  • Rds On - Drain-Source Resistance: 3.7 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V

IRFB4321PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:150 V
  • Id - Continuous Drain Current:83 A
  • Rds On - Drain-Source Resistance:12 mOhms
  • Vgs - Gate-Source Voltage: - - 30 V, + 30 V

IRF3205PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:55 V
  • Id - Continuous Drain Current:110 A
  • Rds On - Drain-Source Resistance:8 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Qg - Gate Charge: 97.3 n

IRF9530NPBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:55 V
  • Id - Continuous Drain Current:110 A
  • Rds On - Drain-Source Resistance:8 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Qg - Gate Charge: 97.3 n

STW16NB60

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:600 V
  • Id - Continuous Drain Current:16 A
  • Rds On - Drain-Source Resistance:350 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Minimum Operating Temperature: - 65 C

STW10NK60Z

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:600 V
  • Id - Continuous Drain Current:10 A
  • Rds On - Drain-Source Resistance:750 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage: 3 V

STW13NK60Z

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:600 V
  • Id - Continuous Drain Current:10 A
  • Rds On - Drain-Source Resistance:750 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage: 3 V

STP50NE10

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:100 V
  • Id - Continuous Drain Current:50 A
  • Rds On - Drain-Source Resistance:27 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 175 C

STP30N06EL

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:60 V
  • Id - Continuous Drain Current:50 A
  • Rds On - Drain-Source Resistance:50 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 175 C

STP19NB20

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:200 V
  • Id - Continuous Drain Current:19 A
  • Rds On - Drain-Source Resistance:150 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 150 C

RFG70N06

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:200 V
  • Id - Continuous Drain Current:19 A
  • Rds On - Drain-Source Resistance:150 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 150 C

IRFP4668PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:200 V
  • Id - Continuous Drain Current:130 A
  • Rds On - Drain-Source Resistance:9.7 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Minimum Operating Temperature: - 55 c
  • Vgs th - Gate-Source Threshold Voltage: 1.8 V

IRFP4227PBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:200 V
  • Id - Continuous Drain Current:65 A
  • Rds On - Drain-Source Resistance:25 mOhms
  • Vgs - Gate-Source Voltage: - 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage: 1.8 V

IRFP250NPBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:200 V
  • Id - Continuous Drain Current:30 A
  • Rds On - Drain-Source Resistance:75 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Vgs th - Gate-Source Threshold Voltage: 1.8 V

IRFP064NPBF

  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage:200 V
  • Id - Continuous Drain Current:30 A
  • Rds On - Drain-Source Resistance:75 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Vgs th - Gate-Source Threshold Voltage: 1.8 V

IRF9620

  • Dynamic dV/dt rating
  • P-channel
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

IRF610

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

IRF2907ZPBF

  • Drain to Source Voltage (Vdss)75 V
  • Current - Continuous Drain (Id) @ 25°C160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)10V
  • Rds On (Max) @ Id, Vgs4.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V Vgs (Max)

IRFD9110PBF

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • For automatic insertion
  • End stackable
  • P-channel
  • 175 °C operating temperature

1N4148W-SOD123 HORNBY

  • These diodes are also available in other case style including the DO-35 case with the type designation 1N4148M, the MiniMELF case with the type designation LL4148 and the MicroMELF case type designation MCL4148.
  • This product is available in AEC-Q101 Qualified and PPAP Capable also.
  • Fast Switching

IR2130PBF

  • Output Current 0.5 A
  • Supply Voltage 20V
  • Pin Count 28
  • Package Type Package Type
  • Number of Outputs 6
  • Topology High and Low Side
  • Number of Drivers 6

We are Stockist & Traders of Electric Components Active & Passive Components.

GET IN TOUCH

3A, 3RD FLOOR 399/399A, MANEK CHAMBERS DR. D.B MARG, MUMBAI - 400004
+91-9152743505
+91-9321743505
+91-8591743505
info@bitchipsemiconductors.com

FOLLOW US

Copyright © 2026 BITCHIP SEMICONDUCTOR. | Designing by TESRON WEBTECH.